DMN53D0LW document number: ds36579 rev. 2 - 2 1 of 5 www.diodes.com november 2013 ? diodes incorporated DMN53D0LW new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 50v 2.0 ? @ v gs = 10v 360ma 3.0 ? @ v gs = 5v 250ma description this new generation mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? battery operated systems and solid-state relays ? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc features ? n-channel mosfet ? low on-resistance ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot323 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging DMN53D0LW -7 sot323 3,000/tape & reel DMN53D0LW -13 sot323 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot323 top view d g s top view pin configuration source gate protection diode gate drain equivalent circuit mm5 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) y = year (ex: a = 2013) m = month (ex: 9 = september) esd protected shanghai a/t site e3
DMN53D0LW document number: ds36579 rev. 2 - 2 2 of 5 www.diodes.com november 2013 ? diodes incorporated DMN53D0LW new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 50 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 360 250 ma continuous drain current (note 6) v gs = 5v steady state t a = +25c t a = +70c i d 250 200 ma pulsed drain current (10s pulse, duty cycle = 1%) i dm 700 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 320 mw (note 6) 420 thermal resistance, junction to ambient (note 5) r ja 395 c/w (note 6) 301 operating and storage temperature range t j, t stg -55 to 150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 50 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? 1.0 a v ds = 50v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 0.8 ? 1.5 v v ds = v gs , i d = 100a gate threshold voltage temperature coefficient (note 8) j gs(th) t v ? ? ? -3.4 ? mv/c ? static drain-source on-resistance r ds (on) ? ? 2.0 ? v gs = 10v, i d = 270ma ? ? 3.0 v gs = 5v, i d = 200ma forward transconductance g fs 80 ? ? ms v ds = 10v, i d = 200ma diode forward voltage v sd ? 0.75 ? 1.2 ? v v gs = 0v, i s = 115ma dynamic characteristics (note 8) input capacitance c iss ? 45.8 ? pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? 5.3 ? reverse transfer capacitance c rss ? 3.9 ? total gate charge v gs = 10v q g ? 1.2 ? nc v gs = 10v, v ds = 10v, i d = 250ma total gate charge v gs = 4.5v q g ?? 0.6 ?? gate-source charge q gs ? 0.2 ? gate-drain charge q gd ? 0.1 ? turn-on delay time t d(on) ? 2.7 ? ns v dd = 30v, v gs = 10v, r g = 25 ? , i d = 200ma turn-on rise time t r ? 2.5 ? turn-off delay time t d(off) ?? 18.9 ?? turn-off fall time t f ?? 11.0 ?? notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2o z copper, with 1inch square copper pad layout 7 .short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMN53D0LW document number: ds36579 rev. 2 - 2 3 of 5 www.diodes.com november 2013 ? diodes incorporated DMN53D0LW new product v , drain-source voltage (v) figure 1 typical output characteristics ds i, d r ain c u r r en t (a) d 0.0 0.3 0.6 0.9 1.2 1.5 012345 v= 1.8v gs v= 3.5v gs v = 10v gs v= 2v gs v= 2.5v gs v= 3v gs v= 4.5v gs v= 5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r ent (a) d 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v= 5v ds t = 150c a t = 125c a t = 25c a t = -55c a t = 85c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 v= 5v gs v = 10v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r ain-s o u r c e on-resistance (normalized) ds(on) 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 v=5v i = 300ma gs d v=v i = 500ma gs d 10 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v=5v i = 300ma gs d v=v i = 500ma gs d 10
DMN53D0LW document number: ds36579 rev. 2 - 2 4 of 5 www.diodes.com november 2013 ? diodes incorporated DMN53D0LW new product package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j ? v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i= 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i, s o u r c e c u r r ent (a) s t = 150c a 0 0.2 0.4 0.6 0.8 1.0 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 85c a t = 25c a t = -55c a v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t an c e (pf) t 1 10 100 0 5 10 15 20 25 30 35 40 c iss c oss c rss f = 1mhz q(nc) g , total gate charge figure 10 gate charge 0 2 4 6 8 10 v g a t e t h r es h o l d v o l t a g e (v) gs 0 0.3 0.6 0.9 1.2 1.5 v = 10v i= a ds d 250m sot323 dim min max typ a 0.25 0.40 0.30 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d - - 0.65 g 1.20 1.40 1.30 h 1.80 2.20 2.15 j 0.0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.18 0.11 ?? 0 8 - all dimensions in mm a m j l d b c h k g
DMN53D0LW document number: ds36579 rev. 2 - 2 5 of 5 www.diodes.com november 2013 ? diodes incorporated DMN53D0LW new product suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com dimensions value (in mm) z 2.8 x 0.7 y 0.9 c 1.9 e 1.0 x e y c z
|
